Notice and Invitation Oral Defense of Doctoral Dissertation The Volgenau School of Engineering, George Mason University Kai Jiang Bachelor of Engineering, Central South University, Changsha, China, 2012 Master of Engineering, Nanjing University, Nanjing, China, 2015 Novel Molecular Memory on Si and Two-Dimensional Materials Wednesday, April 24, 2019, 2:00pm - 4:00pm Engineering Building, Room 3507 All are invited to attend. Committee Dr. Qiliang Li, Chair Dr. Sujitra J Pookpanratana Dr. Dimitris E Ioannou Dr. Rao V Mulpuri Dr. Patrick Vora Abstract The global market for the next generation non-volatile memory is expected to reach $15 billion by 2026. The demand for high density, high reliability and low-power consumption memory rises exponentially due to the continuously increasing need of smart phones, tablets and wearable devices. In this dissertation, flash-like nonvolatile memory devices based on Si and organic molecules have been fabricated and characterized. The devices containing redox-active molecules which are covalently attached on Si exhibit excellent Program/Erase (P/E) speed, good retention and excellent endurance. The charge storage in the molecule-containing memory is derived from the intrinsic redox processes of the molecules under voltage bias, which is very robust in comparison with the other flash memory based on floating gate or traps. In addition, approaches of the redox-molecule attachment on two-dimensional materials have been explored. The redox-active molecular flash memory based on two-dimensional materials have been fabricated and characterized. The results indicated that the redox-active molecules are very attractive materials for next-generation memory application.