Dear Students,

Dr. Roberta Nipoti from The Institute for Microelectronics and Microsystems, Bologna, Italy, will be offering a seminar entitled “Selective doping of SiC by ion implantation: doping efficiency and 2-D simulation of the ion depth profiles next to mask borders” on November 22nd  from 3-4 pm in room 3202 in the Engineering Bldg.

All interested faculty and students are welcome to attend.

Please find attached a seminar announcement with a short abstract.

Best,

Kasia Rogawska

ECE Office