Dr. Roberta Nipoti from The
Institute for Microelectronics and Microsystems, Bologna, Italy, will be offering a seminar entitled
doping of SiC by ion implantation: doping efficiency and 2-D simulation of the
ion depth profiles next to mask borders”
on November 22nd from 3-4 pm in room 3202 in the Engineering Bldg.
All interested faculty and
students are welcome to attend.
Please find attached a seminar
announcement with a short abstract.